Chinese Academy of Sciences Institute of Microelectronics uses ALD technology to significantly improve the efficiency of light-emitting devices

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The Institute of Microelectronics of the Chinese Academy of Sciences has adopted ALD technology to significantly improve the efficiency of light-emitting devices. Recently, the Institute of Microelectronics of the Chinese Academy of Sciences has made significant progress in applying advanced atomic layer deposition technology to high-efficiency semiconductor light-emitting devices. In the 1980s, Atomic Layer Deposition (ALD) was originally proposed by Finnish scientists and applied to the deposition of Al2O3 insulating film in flat panel display devices. In 2007, Intel introduced atomic layer deposition technology into the 45-nanometer node and later integrated circuit manufacturing processes. Due to the high controllability of its deposition parameters (thickness, composition and structure), excellent deposition uniformity and consistency make it in the micro The field of electronics has been widely used. Researcher Liu Honggang from the fourth room of the Institute of Microelectronics of the Chinese Academy of Sciences has proposed the development of high-performance distributed Bragg reflectors using atomic layer deposition technology in view of the uneven thickness and low production efficiency of the distributed Bragg reflector (DBR) prepared by the electron beam method commonly used in industry. The idea of ​​the mirror (DBR) is to improve the light extraction efficiency of semiconductor light-emitting devices. The scientific research team led by him has developed a system suitable for ALD by carrying out systematic research on ALD-DBR material screening, structural design, deposition process, optical measurement, etc. The large-scale production of Al2O3 / TiO2 new DBR structure has been successfully applied to the manufacture of high-efficiency gallium nitride-based light-emitting diodes (GaN LEDs), which has increased the optical output power of GaN LEDs by more than 43%. The research results of the research team have been published in the international professional journal APEX (Applied Physics Express 6 (2013) 022101), becoming one of the 20 most downloaded papers in the month. This achievement has been widely concerned by international and domestic counterparts, and has been reported by Semiconductor Magazine, LED Professional, LEDs Technology and other professional magazines and websites. At the same time, Finnish ALD manufacturer BENEQ has reached an intention to cooperate with the team to develop the technology.

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